主催: 公益社団法人 応用物理学会 多元系化合物・太陽電池研究会
会議名: 令和2年 応用物理学会 多元系化合物・太陽電池研究会 年末講演会 “International Workshop on Ternary and Multinary Compounds”
開催地: オンライン開催
開催日: 2020/12/12
p. 35-39
To prevent exfoliation of Cu-Sn precursor, which deposited by fine channel mist CVD, from Mo coated substrate, annealed Mo coated substrate in N2 atmosphere was used. The prevent of exfoliation was considered to be due to MoO2 thin film grown on Mo by annealing in N2 atmosphere which decreases difference of coefficient of thermal expansion between Cu-Sn precursor and the substrate. After sulfurization, the Cu-Sn precursors showed X-ray diffraction peaks attributed to (133), (333) and (200) peaks of monoclinic Cu2SnS3.
