二源系ファインチャネルミストCVD 法で作製したCu₂SnS₃薄膜の組成比均一化

抄録

In our previous study, Cu-Sn precursor deposited by mist CVD was peeling due to volume expansion during sulfurization to obtain CTS. Therefore in this study, to deposit CTS thin film without sulfurization process, both Cu-Sn source and S source used simultaneously mist CVD method, which named dual-source mist CVD method, was applied. By adjusting the Cu and Sn lifting gases, the thin films were prepared with the band gap of monoclinic CTS, showing X-ray diffraction peaks attributed to(133), (333) and (200) peaks of monoclinic CTS and Raman peaks.