SnS スパッタ堆積時のN2・H2・Ar 混合ガスが薄膜へ与える影響

抄録

The effect of sputtering gas condition for tin monosulfuide (SnS) deposition was investigated. SnS was deposited via RF reactive sputtering by using mixed N2･H2･Ar gas under the p(N2) = 33%–50% condition in order to obtain N-doped thin films. The formation of nitride materials, such as tin pernitride (SnN2), was realized during SnS thin film deposition with excess N2 supply.