三源系ファインチャネルミストCVD法によるCu2Sn1-xGexS3薄膜の作製

抄録

To enable low-cost deposition and achieve a higher Ge content in Cu2Sn1-xGexS3 (CTGS) thin films, a trio-source fine-channel mist CVD method was carried out. Using Cu-Sn, S, and Ge mist sources, CTGS thin films were successfully deposited on soda-lime glass substrates. Moreover, XRD analysis confirmed the deposition of CTGS thin films on the SLG substrate.