Transactions of the Materials Research Society of Japan
Online ISSN : 2188-1650
Print ISSN : 1382-3469
ISSN-L : 1382-3469
Polarization Dependence for Electronic Structure of Bi4Ti3O12 Single Crystal Probed by Soft-X-Ray Raman Scattering
Tohru HiguchiTakeshi HattoriTakeyo Tsukamoto
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2007 年 32 巻 1 号 p. 19-22

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The polarization dependence for the electronic structure of Bi4Ti3O12 (BIT) single crystal has been studied by soft-X-ray emission spectroscopy (SXES) and X-ray absorption spectroscopy (XAS). The valence band and conduction band are mainly composed of O 2p state and Ti 3d state, respectively. The SXES spectra measured at the Ti 2p absorption edge region exhibit three structures, which correspond to elastic scattering, fluorescence and soft-X-ray Raman scattering. The Raman scattering corresponds to the charge-transfer (CT) energy, which corresponds to the transition from O 2p state to unoccupied Ti 3d state. The CT energy in the a-c plane is different from that in the a-b plane. The difference of CT energy originates to the lattice constant and hybridization effect in BIT single crystal.
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© 2007 The Materials Research Society of Japan
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