抄録
This paper presents the reproducible non-lithographic method for the microfabrication of a metal oxide film through a chemical deposition route. This method consists of three processes. First, by using a fluoroalkylsilane molecule, i.e., heptadecafluoro-1,1,2,2-tetrahydrodecyl trimethoxysilane (FAS; CF3[CF2]7CH2CH2Si[OCH3]3), a SiO2/Si surface was densely covered with a self-assembled monolayer (SAM) of FAS. In order to make a chemical template, the FAS-covered surface was irradiated with a vacuum ultraviolet light (VUV) with a wavelength of 172 nm for 30 min at a reduced pressure of 10 Pa through a photomask. As a result, we obtained a FAS-SAM template with alternating hydrophobic trifluorocarbon (CF3) and hydrophilic SiO2 monolayer (SML) regions. Next, a film of metal oxide, i.e tin oxide, was deposited on the substrate with the FAS-SAM template. Tin oxide film grew on both irradiated and unirradiated regions, but the physisorptions deposited even on the undesired region were perfectly eliminated from its surface by our developed ‘solution lithography’, resulting a highly resolved micropattern of tin oxide film. Its pattern-resolution did not change even after the heat treatment at 600°C which is sufficient to crystallize the as-deposited film.
