抄録
Al-doped ZnO (AZO), Ga-doped ZnO (GZO), and GZO/AZO thin films were deposited on polymer (PET) substrates with and without a ZnO buffer layer by using an r.f. magnetron sputtering technique and their structural, electrical, and optical properties were investigated to develop transparent conductors for flexible display applications. The transparent conducting oxide (TCO) films with a ZnO buffer layer showed better electrical and optical properties than those without a buffer layer. The crystal quality of the former was better than the latter, the electrical resistivity of the former is lower than the latter, and the transmittance of the former was also as high as that of the latter. The optimum buffer layer thickness with which the lowest resistivity of GZO/AZO/ZnO films was obtained was found to be 150 micro m. On the other hand it was found that there was little difference in electrical, and optical properties between AZO, GZO and GZO/AZO films with a ZnO buffer layer.
