Abstract
We have simulated grain growth process of a Cu ultra fine wire by the phase field method. As the model of the calculation, we used the poly crystal model of Kobayashi-Warren in which the phase field and the orientation field are considered. The section of the fine wire was divided into 2-dimensional meshes and the time developing equations of the phase field and the orientation field were solved numerically. The isothermal annealing was simulated on the condition of the annealing temperature 523-973 K and the annealing time 333 second, and the constant- rate annealing process was simulated on the condition of the first temperature at 373 K and the final temperature 673-773 K with heating rate 0.45-9.01 [K/s]. In order to clarify the effect of heating rate on the crystal structure, the post-isothermal annealing was performed in the simulation to make the thermal energy supplied to the sample equal among the various annealing processes. The change of the crystal grain radius was investigated by varying the heating rate. It was found that the crystal grain radius obtained by a certain range of the heating rate 1.29-9.01 [K/s] is larger than that obtained by the isothermal annealing.
