Transactions of the Materials Research Society of Japan
Online ISSN : 2188-1650
Print ISSN : 1382-3469
ISSN-L : 1382-3469
Low Damage Etching and SIMS Depth Profiling with Large Ar Cluster Ions
Satoshi NinomiyaKazuya IchikiHideaki YamadaYoshihiko NakataYoshiro HondaToshio SekiTakaaki AokiJiro Matsuo
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2008 年 33 巻 4 号 p. 1043-1046

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We investigated the etching and secondary ion yields of an arginine target bombarded with large Ar cluster ions at incident energies up to 18 keV. The mean size of Ar cluster ions was about 1000 atoms per ion, and the collision energy per incident atom was between a few and a few tens of eV. The sputtering yields of arginine increased linearly with an increase in ion energy, and the yield at 13 keV was of the order of 100 molecules per incident ion. The intensities of the secondary ions kept constant even after etching the arginine film target with large Ar cluster ions. These results indicate that large Ar cluster ions can be used as powerful tools for depth profiling with secondary ion mass spectrometry.
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© 2008 The Materials Research Society of Japan
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