2009 年 34 巻 2 号 p. 225-228
The authors reported elsewhere ITO transparent conducting films prepared by spraying ethanol solution of indium (III) chloride and tin (II) chloride using an inexpensive perfume atomizer onto a glass substrate at 350℃; Y. Sawada et al., Thin Solid Films 409, 46 (2002) and Y. Sawada, Mater. Sci. Forum 437/438, 23 (2003). In the present study, tin-doping was attempted under identical experimental conditions except for using tetravalent tin (IV) chloride which can be dissolved in ethanol more easily than divalent tin (II) chloride. The minimum resistivities (1.4×10-4 and 7.0×10-5 ohm cm), respectively, for the as-deposited and after annealing at 600℃ in reducing atmosphere were approximately equal to our previous one (1.7×10-4 and 7.9×10-5 ohm cm). The lowest resistivity after the annealing was compatible with that (7.7×10-5 ohm cm) of the single-crystal ITO film deposited by pulsed-laser-deposition process onto an yttrium-stabilized zirconium oxide single crystal (Ohta et al., Appl. Phys. Lett. 76 (19) 2740 (2000)). Carrier concentration and mobility, optical transmittance and reflectance were also similar to those deposited using tin (II) chloride reported previously. These results suggested the formation of tin (II) chloride during the deposition process using tin (IV) chloride.
