Properties of Amorphous Ga doped ZnO Thin Film Prepared on 10 x 10 cm² Substrate by Pulsed Laser Deposition

抄録

Recently, it has been required to develop large-area deposition techniques for transparent conductive doped ZnO thin films. In this paper, we report position dependencies of film thickness, carrier concentration, carrier mobility, resistivity and transmittance of a Ga doped ZnO thin film deposited on a 10 x 10 cm² silica glass substrate which was set at a distance of 28 cm from the target by Pulsed Laser Deposition method. In addition, mass spectrometry of the ablated species was measured at the substrate position using a quadrupole mass spectrometry system.