Measurement of X-ray CTR Signals from GaN/GaInN/GaN at High Temperatures Using Newly Developed Measurement System

Abstract

A combined system of laboratory X-ray CTR scattering measurement and MOVPE growth facility was set up and CTR measurement on GaN/GaInN/GaN heterostructure was conducted at room temperature and high temperatures up to 1000 ℃. Clear CTR signals and composition profiles were obtained even at 1000 ℃.