Measurement of X-ray CTR Signals from GaN/GaInN/GaN at High Temperatures Using Newly Developed Measurement System
2009 年 34 巻 4 号 p. 585-588
詳細
2009 年 34 巻 4 号 p. 585-588
A combined system of laboratory X-ray CTR scattering measurement and MOVPE growth facility was set up and CTR measurement on GaN/GaInN/GaN heterostructure was conducted at room temperature and high temperatures up to 1000 ℃. Clear CTR signals and composition profiles were obtained even at 1000 ℃.
