Abstract
The film deposition study of amorphous and microcrystalline Si (a-Si:H, μc-Si:H) was performed by rf plasma-enhanced chemical vapor deposition of a Si3H8 and H2 mixture for Si thin-film solar cells. Highly photoconductive a-Si:H and μc-Si:H films were fabricated at 3-6Å/s. The μc-Si:H films showed preferential crystalline orientation ratio of (220) to (111), I220/I111 of 2.5. The pin a-Si:H and μc-Si;H thin-film solar cells exhibited a efficiency of 6.2% and 3.9%, respectively, despite of the use of a single chamber system. The plasma-annealed ZnO:Al capping p+-a-Si layer further improved the performance of both a-Si:H and μc-Si:H thin-film solar cells.
