2012 年 37 巻 3 号 p. 377-380
Fe-doped SnO2 thin films were deposited by the photochemical method. The SnO2-deposition solution is an aqueous solution containing 10 mmol/L of SnSO4. A small amount of the solutions was repeatedly dropped on the glass substrate and irradiated by the UV light. For the Fe doping, FeSO4 was mixed in the SnO2 deposition solution, or another solution for the Fe doping was prepared separately and alternately dropped and irradiated. The Auger electron spectroscopy measurement revealed that Fe was contained in the deposited thin films. The dependence of electrical properties of the films on annealing temperature was studied. The Fe-doped SnO2 thin films showed enhanced electrical conductivity after 300 and 400°C annealing in a nitrogen atmosphere.