Preparation of Al-doped ZnO Sputtering Target for Transparent Conductive Films by Pulse-Current Sintering

抄録

Aluminum-doped Zinc oxide (AZO) sputtering targets (10 mm in diameter and 5 mm thick) were prepared by a pulse-current sintering method, where metallic Al was selected as the Al source. The ZnO sintered materials doped using metallic Al showed low electrical resistivity owing to both the Al doping and precipitation of metallic zinc. AZO thin films were prepared by RF magnetron sputtering using the prepared target, and showed an electrical resistivity of approximately 9.6 × 10^-4 Ωcm. Moreover, increase in electrical resistivity at the erosion area was small compared with that in films prepared with a conventional target.