RF Characteristics of Poly-Si Thin-film Transistors

抄録

This work employs double patterning and Ni salicides processes in the fabrication of polycrystalline silicon (poly-Si) thin-film transistors (TFTs) and studies the radio frequency (RF) performance of the fabricated devices. The fabricated TFTs show a high on-to-off current ratio (I_on/I_off) of 1.78 × 10⁷ and a high current drive of around 200 μA/μm. The cutoff frequency, ƒ_t, and maximum frequency of oscillation, ƒ_max exceeds 8 and 11 GHz, respectively, biased at a low-operating drain voltage of 2 V. The equivalent-circuit models are also derived and characterized with both the measured and simulated S-parameters. These results demonstrate that the poly-Si TFT technique is promising for RF module implemented in the system-on-panel applications.