抄録
Vertical-channel organic field-effect transistors (SVC-OFET) having a very short channel length formed at step-edge are fabricated by a self-aligned process. The carriers flow the vertical direction in the short channel along of the step-edge structure. SVC-OFETs showed excellent device performances with a high current and high cutoff frequency of approximately 2 MHz, which is a very high value as organic transistors. We demonstrate that the SVC-OFET has advantages for an active antenna of flexible information tag and active-matrix display applications. The fabrication process and device characteristics of SVC-OFETs are described. Furthermore basic performances of an active antenna system using SVC-OFETs are discussed.
