Regular Papers
Decrease in Resistivity of Spin-Coated ITO Films on TiO2 by Annealing in Oxygen Gas
2014 年 39 巻 3 号 p. 283-287
詳細
2014 年 39 巻 3 号 p. 283-287
ITO and TiO2 layers were prepared using spin-coating method. TiO2 films were spin-coated on n-type Si(100) substrates with resistivity of 1-10 Ωcm and annealed at 950°C in O2 gas for 60 minutes. ITO films were spin-coated on Si substrates or on TiO2 layers and annealed at 700°C in O2 or N2 gas. They were annealed for 30, 60, 90 or 120 minutes. Properties of the films were investigated using X-ray diffraction (XRD), four-point probe method and thickness monitor. The resistivity of ITO films prepared on Si substrates and annealed in O2 gas was lower than that annealed in N2 gas. The resistivity of the ITO films prepared on TiO2 layers and annealed in O2 gas was almost the same as that for the films prepared on Si substrates and annealed in O2 gas. The resistivity of the ITO films prepared on TiO2 layers and annealed in N2 gas decreased when annealing time was shorter than 60 minutes and began to increase after 60 minutes. These results can be explained by the proposed model for the amount of oxygen vacancies in ITO films
