抄録
FeSix films were deposited on Si (100) substrates by RF-sputtering method using an FeSi3 target. Total deposition time was 30 min in all cases. Various temperature programs during deposition were employed. After deposition, FeSix films were annealed at 400-900°C for 10min in Ar gas. The crystal quality of the films was analyzed by X-ray diffraction (XRD) measurements, the surface of β-FeSi2 films was observed by an optical microscope and the film thickness was measured by a scanning electron microscope (SEM). It was revealed that the substrate heating at the initial stage of the deposition only for 5 min was enough to reduce cracks on the surface of the β-FeSi2 films.
