Evaluation of resistive switching properties for BiFeO₃ film capacitors using Positive-Up-Negative-Down measurement

Abstract

Nd-doped BiFeO₃ (BNF) thin film of 170 nm thickness was deposited on SrRuO₃-coated (100) Nb-doped SrTiO₃ substrate by pulsed laser deposition. Resistive switching and ferroelectric properties of BNF film capacitor were investigated by using Positive-Up-Negative-Down measurement. Switched charge without influence of the leakage current was 121 μC/cm² with a maximum applied voltage of 9 V. The leakage current was estimated from the gradient of the pulse response when reading pulse was applied. After writing by voltages of -9 V and +9 V the current density at reading voltage of -1.8 V were 1.2 mA/cm² and 14 μA/cm², respectively. Maximum ON/OFF ratio of the leakage current was 86.