Transactions of the Materials Research Society of Japan
Online ISSN : 2188-1650
Print ISSN : 1382-3469
ISSN-L : 1382-3469
Regular Papers
Unintentional tungsten incorporation in diamond during hot-filament chemical vapor deposition
Shinya OhmagariKridsanapan SrimongkonVittaya AmornkitbamrungHideaki YamadaAkiyoshi ChayaharaShin-ichi Shikata
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2015 Volume 40 Issue 1 Pages 47-50

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Abstract
Hot-filament chemical vapor deposition exhibits high potential for scaled-up diamond growth. However, contamination from filament materials may adversely affect diamond quality. In this study, we investigated the effects of off-axis (100) planes on impurity incorporation. Tungsten atoms at concentration levels of 1018 cm-3 were unintentionally incorporated as impurities from filament wires used; this was confirmed by secondary ion mass spectroscopy. The incorporated amount did not depend on the off-axis angle of substrate, which ranged from 0 to 5°. The incorporation mechanism is discussed on the basis of the obtained experimental results. It is suggested that tungsten atoms are incorporated preferentially at facet faces rather than at step edges.
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© 2015 The Materials Research Society of Japan
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