Optical properties of Ga0.82In0.18N p-n homojunction blue-green light-emitting-diode grown by radio-frequency plasma-assisted molecular beam epitaxy

Takeyoshi Onuma; Kento Narutani; Shuhei Fujioka; Tomohiro Yamaguchi; Ke Wang; Tsutomu Araki; Yasushi Nanishi; Liwen Sang; Masatomo Sumiya; Tohru Honda

doi:10.14723/tmrsj.40.149

Regular Papers

Optical properties of Ga_0.82In_0.18N p-n homojunction blue-green light-emitting-diode grown by radio-frequency plasma-assisted molecular beam epitaxy

Takeyoshi Onuma, Kento Narutani, Shuhei Fujioka, Tomohiro Yamaguchi, Ke Wang, Tsutomu Araki, Yasushi Nanishi, Liwen Sang, Masatomo Sumiya, Tohru Honda

著者情報

Takeyoshi Onuma
Department of Liberal Arts, Tokyo National College of Technology
Department of Information and Communications Engineering, Kogakuin University
Kento Narutani
Department of Information and Communications Engineering, Kogakuin University
Shuhei Fujioka
Department of Information and Communications Engineering, Kogakuin University
Tomohiro Yamaguchi
Department of Information and Communications Engineering, Kogakuin University
Ke Wang
Department of Photonics, Ritsumeikan University
Tsutomu Araki
Department of Photonics, Ritsumeikan University
Yasushi Nanishi
Department of Photonics, Ritsumeikan University
Liwen Sang
Wide Bandgap Material Group, National Institute for Materials Science (NIMS)
Masatomo Sumiya
Wide Bandgap Material Group, National Institute for Materials Science (NIMS)
Tohru Honda
Department of Information and Communications Engineering, Kogakuin University

キーワード: GaInN, MBE, photovoltaic, electroluminescence, photoluminescence

ジャーナルフリー

2015 年 40 巻 2 号 p. 149-152

DOI https://doi.org/10.14723/tmrsj.40.149

詳細

抄録

Optical properties of Ga_0.82In_0.18N p-n homojunction light-emitting-diode are investigated by the photovoltaic, photoluminescence-excitation, electroluminescence (EL), and photoluminescence (PL) measurements. Although the X-ray diffraction measurements indicate a uniform InN molar fraction x in the sequentially grown n- and p-type Ga_0.82In_0.18N layers, the EL and PL exhibited different peak energies at room temperature. The difference is explained by the emission models in the n- and p-type of Ga_0.82In_0.18N layers. The results demonstrate a potential use of Ga_1-xIn_xN p-n homojunction for further development of functional device structures.

責任著者(Corresponding author)

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