抄録
We optimized AlN growth conditions for hydride vapor phase epitaxy by using simulation. In the simulations, the growth temperature and growth pressure were 1500 °C and 100 kPa, respectively. We studied on growth rate distribution using different separation gas species and NH3 flow rates in order to obtain uniform AlN deposition. High uniformity AlN growth was achieved by using N2 as the separation gas and lowering NH3 flow rates.
