Effects of annealing on properties of electrochemically deposited Cu_xZn_yS thin films

抄録

Zn-rich Cu_xZn_yS is a transparent p-type semiconductor. In this study, we fabricated Cu_xZn_yS thin films by electrochemical deposition and investigated changes in properties due to annealing in a sulfur atmosphere. The sample before annealing was amorphous with composition Cu : Zn : S : O = 0.03 : 0.29 : 0.57 : 0.11. After one hour annealing at 400℃, we observed formation of the ZnS phase by X-ray diffraction and Raman measurements. Although the sample exhibited p-type conductivity before the annealing, it did not clearly show p-type conductivity after the annealing at temperatures higher than 300℃. Those results indicate that Cu_xZn_yS is a metastable phase and is believed to separate into the ZnS phase and a phase including Cu by the annealing at temperatures higher than 300℃.