MNOS不揮発性メモリーを内蔵した電子時計

抄録

There are several problems as listed below in packing the MNOS memory in the CMOS for watch use, which consists of an IC with low. breakdown voltage; 1) High voltage applied to the semiconducting non-volatile memory in writing or erasing state either breaks the peripheral IC's or causes an errorneous operation in nearby circuit. 2) If the service life of a watch be assumed 10 years, that of the semiconducting non_volatile memory packed in it is required more than 10 years. The most appropriate structure to fulfill this condition has not yet been investigated. 3) The most appropriate structure of the semiconducting non-volatile memory to match with the CMOS for watch use has not yet been clarified. We tried to improve the production of thin oxide, the decay rate in writing state, and the method of writing and erasing, in order to solve the above-mentioned problems. Thus, we have succeeded in the production of watches containing MNOS non-volatile memory.