RFマグネトロンスパッタリング法によるITO導電性薄膜の作製と基礎物性

抄録

In this paper, the transparent and conductive thin films of ITO (5 wt% S_nO_2 doped) were prepared by rf-magnetron sputtering. In order to investigate the characteristics of ITO films which have been used in liquid crystal cells and solar batteries, each of ITO films was made less than l000 A in thickness. Film structure, optical properties, and oxidation process were investigated. We have obtained low electrical resistivity (1.3×1O^(-3)-6.6×10(-4)Ω-cm) and high transmission (>90 %) after heat treatment (450℃ in 30 min.). The post-oxidation anealing behavior was studied by means of the conductivity measurements. The structural change and the oxidation process of ITO thin films were definitely observed.