Raman scattering study of GaMnN

Abstract

We have studied the Raman scattering of Manganese (Mn) doped in GaN. The Raman spectra exhibited the characteristic peaks of pure GaN and modes that could be associated with Mn-induced lattice disorder. The Raman spectra of GaMnN grown by the Plasma-enhanced molecular beam epitaxy have been investigated. The peak about 669 cm^<-1>, as well as the broadening structures around 600〜700cm^<-1>, not observed in pure GaN have been found. The carrier concentration of a sample was also estimated from the plasmon mode attributed to that of the sample. It shows a good agreement with the data obtained from the other method.