GaMnN のラマン散乱に関する研究
2002 年 35 巻 p. 39-42
詳細
2002 年 35 巻 p. 39-42
We have studied the Raman scattering of Manganese (Mn) doped in GaN. The Raman spectra exhibited the characteristic peaks of pure GaN and modes that could be associated with Mn-induced lattice disorder. The Raman spectra of GaMnN grown by the Plasma-enhanced molecular beam epitaxy have been investigated. The peak about 669 cm^<-1>, as well as the broadening structures around 600〜700cm^<-1>, not observed in pure GaN have been found. The carrier concentration of a sample was also estimated from the plasmon mode attributed to that of the sample. It shows a good agreement with the data obtained from the other method.
