150 GHz Fundamental Oscillator Utilizing Transmission-line-based Inter-stage Matching in 130nm SiGe BiCMOS Technology

Sota KANO; Tetsuya IIZUKA

doi:10.1587/transfun.2023GCL0001

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150 GHz Fundamental Oscillator Utilizing Transmission-line-based Inter-stage Matching in 130nm SiGe BiCMOS Technology

著者情報

キーワード: heterojunction bipolar transistor (HBT), silicon germinium (SiGe), BiCMOS, millimeter-wave integrated circuits, D-band, fundamental oscillator

ジャーナルフリー早期公開

論文ID: 2023GCL0001

DOI https://doi.org/10.1587/transfun.2023GCL0001

この記事には本公開記事があります。

The final version of this article is now available: Vol. E107.A (2024), No. 5 pp. 741-745

詳細

抄録

A 150 GHz fundamental oscillator employing an inter-stage matching network based on a transmission line is presented in this letter. The proposed oscillator consists of a two-stage common-emitter amplifier loop, whose inter-stage connections are optimized to meet the oscillation condition. The oscillator is designed in a 130-nm SiGe BiCMOS process that offers f_T and f_MAX of 350 GHz and 450 GHz. According to simulation results, an output power of 3.17 dBm is achieved at 147.6 GHz with phase noise of -115 dBc/Hz at 10MHz offset and figure-of-merit (FoM) of -180 dBc/Hz.

責任著者(Corresponding author)

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