抄録
An electro-thermal model of the on-resistance self-heating in SiC MOSFET channel region is proposed. The model consists of the heat generation rate of the steady-state self heating due to the drain current of long channel MOSFET, lattice temperature rise due to the heat generation rate, and the electron temperature rise calculated from the lattice temperature and the electric field. This is the first attempt to consider the major factors of the mobility and to predict the electron temperature rise.
