A 240×960 12-in. diagonal LCD, addressed by the new structure BIP-TFTs. has been fabricated and tested. The BIP-TFT structure was designed with buried isolated pixel-electrode in divided-layer gate insulator to improve fabrication yield. An orderof magnitude reduction in yield loss due to pixel defects was realized by minimizingboth pixel bus line and gate/drain-bus line shorts without additional process complexity.
