770MHz 100W 模型MOSFET 2SK1739

抄録

A high performance, RF power MOS FET has been developed for broadcast equipment which can deliver over 100W of output power with 50% drain effeciency and 10 dB gain at 770 MHz. This high performance was achieved by employing high voltage structure which parameters was optimized by computer simulation multi-layer refractory metal gate, and direct grounded structure packageing technology.