A 648x487 pixel PtSi Schottky-barrier infrared CCD image sensor was developed. Due to developing the Modified Inverted-LOCOS Process which can minimize dead region in pixel, and Two Dopant Concentration Structure which achieves both large charge handling capability and high transfer efficiency, a 40% fill factor of 21x21 μm size pixel and 12MHz CCD driving were obtained. Noise equivalent temperature difference (N.E.T.D.) was 0.1 Kelvin.
