SELF ALIGNED POLY-SI TFTS FOR LCDS FABRICATED AT LOW TEMPERATURE BY ADVANCED ION IMPLANTATION PROCESS

Abstract

The self-aligned poly-Si TFTs have been fabricated on glass substrates at a low temperature below 450℃ by a new method. which consists of two techniques : the laser induced crystallization of PECVD amorphous silicon and an ion doping process that utilizes a large diameter ion beam with non mass separation and following low temperature activation anneal. The optical performances of the LC-TVs by this method were studied and compared to those of the inverted staggered TFT LC-TVs.