BiCMOSプロセス/デバイスの現状と将来展望 : 情報入力
1991 年 15 巻 77 号 p. 27-32
詳細
1991 年 15 巻 77 号 p. 27-32
A short review of high performance BiCMOS technology is presented. Process design issues relating buried layer, epitaxial layer, well and isolation are briefly discussed. Then, SiGe base HBT-CMOS is demonstrated for future BiCMOS LSIs.
