Contact Series Resistance in Hydrogenated Amorphous Silicon Thin Film Transistor

Abstract

The effective channel length and series contact resistance were extracted for various thin film transistors. The series contact resistance was decreased with source-drain voltage, and the difference between mask channel length and effective channel length was decreased with the source-drain voltage. For small source-drain voltages, both of them came to be constant. Contact-series resistances were measured for various shapes of thin film transistors to see geometrical effect.