Polysilicon Thin Film Transistors Fabricated on Low-Temperature Crystallized Amorphous Silicon Films and As-Deposited Polysilicon Films.

Abstract

Polysilicon TFTS With different channel dimensions were fabricated on low-temperature crystallized amorphous silicon films and as-deposited polysilicon films. The performance of these devices was investigated and compared. The performance of devices fabricated on annealed amorphous silicon film is shown to be superior to that of devices fabricated on as-deposited polysilicon films. It was found that the performance of polysilicon TFTS depends strongly on the material characteristics of the polysilicon films, but only weakly on the channel dimensions.