The seed assisted crystallization process has been studied and compared with the conventional SPC process. The micro crystalline and the poly crystalline seed layer were prepared as thickness of 100Å- 500Å and a-Si:H was deposited on the seed layer. They were crystallized by furnace annealing at N, atmosphere. TEM micrographs and Raman Spectra were used for analyzing the crystalline quality. It suggested a new possibility of the low temperature crystallization process.
