1995 年 19 巻 54 号 p. 13-16
We fabricated and characterized silicon field emitter tip arrays by gate etch-back process. A very sharp tip of 1.1 μm height was obtained by two step dry etching process and sharpening oxidation process. Polysilicon was deposited for gate electrodes and spin-on-glass was coated for planarization. After polysilicon etching by dry methods and dipping in buffered HF solution, we obtained a very sharp tip array. While this process is very simple and stable, the device has smaller gap space between the tip and the gate electrode and lower leakage currents than those fabricated by a conventional e-beam evaporated method. The resulting device has been observed by SEM and has been tested in ultrahigh vacuum (< 5×10^<-7> Torr) testing chamber. The measured emission current was 10.9 μA at 85V in 256 tip array.
