1995 年 19 巻 54 号 p. 23-27
Silicon field emission cathodes were fabricated using thin-film techniques and 1.2 μm optical photolithography. With two-step reactive ion etching and thermal oxidation for tip sharpening, 1.2 μm height silicon pillars were formed. Gate oxide layer was deposited using an electron-beam evaporator. And then Ti_<0.1> W_<0.9> was sputtered for gate electrodes. As a result, the gate electrodes easily approach the oxidized cathodes. The gate hole diameter is greatly reduced to sub-halfmicron (< 0.5 μm) from the initial mask size (〜1.2 μm). The I-V characteristics of cathodes show low turn-on voltages (< 55 V) in ultrahigh vacuum (< 3.0×10^<-7> Torr) and the linearity of Fowler-Nordheim plots.
