NiFeCo/Cu/Co System for Magnetoresistive Random Access Memory (MRAM)

抄録

Memory characteristics of NiFeCo/Cu/Co system deposited on 4°tilt-cut Si (111) substratc have been investigated. With a Cu (50A) underlayer on 4° tilt-cut Si (111) substrate, NiFeCo/Cu/Co multilayers developed in-plane uniaxial magnetic anisotropy and they showed perfectly square R-H curves, which represent the possibility of a MRAM application. In large scale test MRAM cells consisting of [NiFeCo (60A)/Cu (40A)/Co (30A)/Cu (40A)]_5 multilayers, 400 μV voltage difference between the two magnetoresistive states was obtained with 2 A of word current at 1 mA of fixed sense current, which has been believed to show high potentials of NiFeCo/Cu/Co system in a MRAM application