Abstract
Piezoelectric Photothermal Spectroscopy (PPTS) measurements of Si p-n junction were carried out at room temperature to investigate the carrier recombination processes at the interface. In addition to PPTS measurements, surface photo-voltage spectroscopy (SPVS) mesurerments were also done to separate the photo-voltage signal from the nonradiative carrier recombination signal. We found that PPTS and SPVS peaks were observed at the different photon energy positions. This means that PPTS could observe the electronic transition at the interface that could not be detected by the SPVS method. Usefulness of the present PPTS methodology is demonstrated.
