1-04P-21 GaInNAs/GaAs SQWからの光励起されたキャリアの漏れの検出(ポスターセッション 1)
2007 年 28 巻 p. 57-58
詳細
2007 年 28 巻 p. 57-58
The GaInNAs/GaAs single quantum well (SQW) structure is remarked as a suitable material of an optical fiber communication. We have carried out the piezoelectric photothermal (PPT) and the surface photovoltage (SPV) measurements for Ga_<0.65>In_<0.35>N_<0.995>/GaAs single quantum well (SQW). Since only the PPT measurement at 100K could observe the signal from the first quantized level, but not for the SPV we conclude that the observed PPT signal is related to the leak of the photogenerated carriers from GaInNAs/GaAs SQW.
