Increased use of Carbon/Carbon (C/C）composites has necessitated forming complex structures, which require high temperature secondary bonding. Secondary bonding of C/C interfaces provides design flexibility and also alleviates complicated fabrication problems. In this study, secondary bonding of C/C composites was studied by use of reaction-formed SiC process and resin-carbonization process. In the reaction-formed SiC process, Si powders set between C/C plates were heated to form SiC adhesive layer by liquid silicon-carbon reaction. On the other hand in the resin-carbonization process, C/C plates were at first bonded by resin. The resin bonded C/C composites were then heat-treated to carbonize the resin. Finally bonding strength were measured by a plunger method which was specially designed shear loading method.
