Amorphous semiconductors have potential usefulness in optical memory and imaging applications.
Phenomena of amorphous-crystalline transformation, changes of optical properties, transmission and refractive index, in the amorphous phase, photo-doping, and photodecomposition are discussed in somewhat detail, after a brief description of sample preparation technique.
Direct dot writing and erasing with laser radiation are carried out with pulsed light of μ sec duration. This reveals existence of photo-enhanced crystallization besides usual thermal crystallization.
Absorption edge shift upon illumination and heating at temperatures below the glass transition temperature, observed in (Se, S)-based amorphous materials, is not related with crystallization.
Doping of metals into chalcogenide films by illumination (photo-doping) provides means of changing physical properties of the film.
Examples of optical memory and high-resolution imaging using amorphous-crystalline transformation are given. Holographic recording of bit patterns and supermicrofiche are produced in the (Se, S)-based chalcogenide films. Their recording characteristics are described.
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