This paper discusses the effects of pore arrangements on the dielectric property of porous low-
k and high-
k dielectrics. Higher performance large scale integration (LSI) requires lower dielectric constant to decrease line-to-line capacitance. Recently, porous low-
k dielectrics are introduced for low-
k dielectrics because of its ultra lower dielectric constant. However, their poor mechanical strength causes fractures of porous low-
k dielectrics during Chemical Mechanical Polishing (CMP) process. Therefore, it is important to develop porous low-
k dielectrics with high mechanical strength and low dielectric constant. On the other hand, porous high-
k dielectrics are needed as ferroelectrics. It is also important to understand the dielectric property of porous high-
k dielectrics. We studied the dielectric property of porous low-
k and high-
k dielectrics by finite element method and U
* theory. The index U
* is used to indicate load paths in a structure. We extended U
* theory to the electrostatic field problem and investigated the dielectric property of dielectrics. By using U
* in electrostatic field analysis, the dielectric performance of porous low-
k and high-
k dielectrics becomes more clear.
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