By using a molecular dynamics method, a film formation in an early sputtering process was modeled, and structural properties of Al thin films sputter-deposited on Al crystal substrate were simulated. Simulations were conducted for modeled sputtering conditions which were specified by the substrate temperature T
si and the incident energy of atom E
i. When the substrate temperature was changed, no significant difference was observed in the radial distribution function, though an island-like structure was remarkable in the film simulated for a lower T
si. Structures of simulated films were generally near crystal type in the entire region of E
i investigated in this study. To discuss simulated structures quantitatively, an apparent density was defined for a simulated film. The defined apparent density of film was smaller in the region of lower E
i, Where the island-like structure occupied a larger portion in a film. The apparent density was also found to increase with increasing T
si and/or E
i.
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