In this article, a high SNR global shutter CMOS image sensor technology for high precision imaging and analysis and its application for absorbance spectroscopy are discussed including technical requirements and future directions. Also presented is the developed high SNR voltage domain global shutter image sensor with sensitivity in wide wavelength range for absorption imaging. The fabricated chip achieved 69.7 dB maximum SNR and 1000 fps maximum SNR and successfully captured concentration distribution of NO₂ gas in semiconductor manufacturing chamber owing to its high SNR and high framerate.