Fatigue-free and highly c-axis oriented Bi
4-xSm
xTi
3O
12 (BSmT; x = 0.85) thin films were grown on Pt/TiO
2/SiO
2/Si(100) substrates using the method of metal-organic sol decomposition. The BSmT film capacitor with a top Pt electrode showed significantly improved values of the remanent polarization (P
r) and the nonvolatile charge as compared to those of the Bi
4-xLa
xTi
3O
12 (BLT; x = 0.75) film capacitor, recently known as a promising candidate for nonvolatile memories. The 2P
r value of the BSmT capacitor was 49 μC/cm
2 at an applied voltage of 10 V while the net nonvolatile charge was as high as 20 μC/cm
2 and remained essentially constant up to 4.5 × 10
10 read/write switching cycles at a frequency of 1 MHz. In addition to these, the capacitor showed excellent charge-retention characteristics with its sensing margin of 17 μC/cm
2 and a strong resistance against the imprinting failure.
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